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The company has plenty of patents and strong qualifications
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Invention patents
Chinese Invention Patent - A Schottky Diode and Its Manufacturing Method- 201910718112.3 (ZN01-CNAP003)
Chinese Invention Patent - a Boost Converter- 2022115876412
A Semiconductor Device and its Electronic- ZL-201921451962.3
A High Electron Mobility Transistor with High Breakdown Voltage Capability- ZL-201921452016.0
US Patent - A High Electron Mobility Transistor with High Breakdown Voltage Capability - US 11527641B2
US Patent - Semiconductor Devices and its Manufacturing Methods - US-11152498-B2